| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,930 pcs
|
5930 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
2,050 pcs
|
2050 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI8402DB-T1-E1 is a 20V N-Channel MOSFET utilizing TrenchFET technology for reduced footprint and on-resistance. It is suitable for battery and load switching applications in portable devices.
Key electrical specifications include a maximum drain-source voltage of 20V and a continuous drain current of 5.3A at 25°C ambient temperature. The Rds On is a maximum of 37mOhm at 1A and 4.5V Vgs. The gate threshold voltage is 1V maximum at 250µA.
This MOSFET comes in a 4-Microfoot package, specifically a 4-XFBGA, CSPBGA, designed for surface mounting. It operates within a junction and storage temperature range of -55°C to 150°C. The component is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
Applications include PA, battery, and load switching for portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 20V.
It is available in a 4-XFBGA (Microfoot) surface-mount package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, it is lead-free (Pb-free) as per the datasheet.
The continuous drain current is 5.3A at 25°C ambient temperature.
The maximum on-resistance is 37mOhm at 1A and 4.5V gate drive.
The maximum gate threshold voltage is 1V at 250µA drain current.