| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,520 pcs
|
1520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| FET Type | |
| Failure Rate | |
| Gate Charge | |
| Mounting Type | |
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| Technology |
The SI8401DB-T1-E3 from Vishay Siliconix is a P-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 20V and can handle a continuous drain current (Id) of 3.6A at 25°C.
Key electrical characteristics include a maximum on-resistance (Rds On) of 65mOhm at 1A and 4.5V gate-source voltage, and a gate threshold voltage (Vgs(th)) of 1.4V maximum at 250µA. The device has a maximum gate charge (Qg) of 17 nC at 4.5V and a maximum gate-source voltage of ±12V.
This MOSFET has a power dissipation rating of 1.47W at 25°C and operates within a temperature range of -55°C to 150°C. It is constructed using Metal Oxide Semiconductor (MOSFET) technology and belongs to the TrenchFET® series.
The SI8401DB-T1-E3 is available in a surface mount package, specifically a 4-Microfoot package with a case type of 4-XFBGA, CSPBGA. It is supplied on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
3.6A at 25°C.
65mOhm maximum at 1A and 4.5V gate drive.
4-Microfoot (4-XFBGA, CSPBGA) surface-mount package.
-55°C to 150°C.
1.4V maximum at 250µA.
17nC at 4.5V.