SI8401DB-T1-E3 The Vishay Dale SI8401DB-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 3.6A at 25°C. It features a low Rds On of 65mOhm at 1A, 4.5V.
Mfr Part #:

SI8401DB-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI8401DB-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and a continuous drain current of 3.6A at 25°C. It features a low Rds On of 65mOhm at 1A, 4.5V.
✓ Total Stock: 1,059 pcs
$ Price Range: $0.99

SI8401DB-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
59 pcs
59 pcs On Request 1 On Request On Request 2008 On Request On Request

SI8401DB-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI8401DB-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI8401DB-T1-E3 is a P-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 3.6A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 65mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 1A.

 

This device is housed in a compact 4-Microfoot package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The TrenchFET® series technology ensures efficient performance.

 

Key electrical characteristics include a gate-source voltage (Vgs) maximum of ±12V and a gate threshold voltage (Vgs(th)) of 1.4V at 250µA. The maximum power dissipation is rated at 1.47W at 25°C. The product is RoHS3 Compliant.

SI8401DB-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: Vishay Dale SI8401DB-T1-E3 P-Channel 20V MOSFET
Subcategory: P-Channel

SI8401DB-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI8401DB-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI8401DB-T1-E3 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current of 3.6A at 25°C.
  • Low Rds On: 65mOhm at 1A, 4.5V.
  • Compact 4-Microfoot surface mount package.
  • RoHS3 Compliant environmental status.

SI8401DB-T1-E3 Applications

  • Load switching in portable electronics.
  • Battery protection circuits.
  • Powermanagement for low-voltage systems.
  • DC-DC converter stages.

SI8401DB-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI8401DB-T1-E3?

The drain-source voltage (Vds) for the SI8401DB-T1-E3 is 20V.

What is the continuous drain current of the SI8401DB-T1-E3?

The continuous drain current (Id) for the SI8401DB-T1-E3 is 3.6A at 25°C.

What is the on-resistance of the SI8401DB-T1-E3?

The Rds On is a maximum of 65mOhm at a drain current of 1A and gate-source voltage of 4.5V.

What is the operating temperature range for this MOSFET?

The operating junction temperature range (TJ) is -55°C to 150°C.

What package type is the SI8401DB-T1-E3 in?

The SI8401DB-T1-E3 is in a 4-XFBGA, CSPBGA package, also referred to as 4-Microfoot, and is suitable for surface mounting.

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