| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,424 pcs
|
1424 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SI7998DP-T1-GE3 is a dual N-channel power MOSFET designed for system power DC/DC applications. It offers a 30V drain-source voltage and a low on-resistance, with values as low as 5.3mOhm at 25A and 10V Vgs.
This MOSFET utilizes TrenchFET technology and is PWM optimized, ensuring efficient switching performance. It is rated for a continuous drain current of up to 30A and a maximum power dissipation of 40W at 25°C case temperature.
The device comes in a PowerPAK SO-8 Dual package, designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The MOSFET is also 100% UIS tested and features a logic-level gate.
Key electrical characteristics include an input capacitance of 1100pF (max) at 15V and a gate charge of 26nC (max) at 10V Vgs. The gate threshold voltage is 2.5V (max) at 250µA.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V.
The package type is PowerPAK SO-8 Dual.
The operating temperature range is -55°C to 150°C (TJ).
Yes, the RoHS status is RoHS3 Compliant.
The maximum continuous drain current is 30A at TC = 25°C.
The on-resistance is as low as 5.3mOhm at 25A and 10V Vgs.
The gate charge is a maximum of 26nC at 10V Vgs.