SI7997DP-T1-GE3 The Vishay SI7997DP-T1-GE3 is a dual P-channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 60A. It features a low Rds On of 5.5mOhm at 10V Vgs.
Mfr Part #:

SI7997DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay SI7997DP-T1-GE3 is a dual P-channel MOSFET with a 30V drain-source voltage rating and a continuous drain current of 60A. It features a low Rds On of 5.5mOhm at 10V Vgs.
✓ Total Stock: 43,494 pcs

SI7997DP-T1-GE3 Available from 5 distributors

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✓ Non-Authorised

SI7997DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

SI7997DP-T1-GE3 Description

Short technical summary and product information.

The Vishay SI7997DP-T1-GE3 is a dual P-channel MOSFET designed for battery and load switching applications, particularly in notebook PCs. It utilizes TrenchFET power MOSFET technology and is optimized for PWM applications.

 

This device offers a drain-source voltage (Vds) of -30V and a continuous drain current (Id) of up to -60A. The on-resistance (Rds On) is as low as 5.5mOhm at a gate-source voltage (Vgs) of -10V, and 7.8mOhm at -4.5V Vgs. The gate charge (Qg) is typically 51nC.

 

Key electrical parameters include a gate-source voltage range of ±20V. The device operates within a junction temperature range of -55°C to 150°C. It has a maximum power dissipation of 46W.

 

The MOSFET is housed in a PowerPAK SO-8 Dual package, designed for surface mounting. This package offers efficient thermal performance with a junction-to-case thermal resistance of 2.7°C/W.

SI7997DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET Power MOSFET
Canonical Name: Vishay SI7997DP-T1-GE3 Dual P-Channel 30V MOSFET
Subcategory: Dual P-Channel

SI7997DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7997DP-T1-GE3 Features

  • Dual P-Channel 30V MOSFET.
  • Low Rds On: 5.5mOhm at -10V Vgs.
  • High continuous drain current: -60A.
  • PWM optimized TrenchFET technology.
  • Surface mount PowerPAK SO-8 Dual package.

SI7997DP-T1-GE3 Applications

  • Ideal for battery switching.
  • Suitable for load switching.
  • Designed for notebook PCs.
  • Used in power management.

SI7997DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range for the SI7997DP-T1-GE3?

The operating temperature range is -55°C to 150°C.

What is the Rds On (Max) for the SI7997DP-T1-GE3 at Vgs = -10V?

The Rds On (Max) is 5.5mOhm at Vgs = -10V.

What is the continuous drain current for the SI7997DP-T1-GE3?

The continuous drain current is -60A.

What is the package type for the SI7997DP-T1-GE3?

The package type is PowerPAK SO-8 Dual.

What is the RoHS status of the SI7997DP-T1-GE3?

The RoHS status is RoHS3 Compliant.

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