| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
150 pcs
|
150 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7980DP-T1-GE3 is a dual N-channel MOSFET featuring TrenchFET technology. It offers a 20V drain-source voltage and a continuous drain current of up to 8A (at TC=25°C) or 11A (at TA=25°C). The on-resistance (Rds(on)) is as low as 22mOhm at 5A and 10V Vgs.
This MOSFET includes an integrated Schottky diode. It is housed in a PowerPAK SO-8 dual package, suitable for surface mounting. The operating temperature range is -55°C to 150°C.
Key electrical characteristics include a gate charge (Qg) of 27nC at 10V Vgs and an input capacitance (Ciss) of 1010pF at 10V Vds. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA.
Applications for this component include synchronous buck converters, game machines, and notebook computers. It is RoHS3 compliant and Halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI7980DP-T1-GE3 is 20V.
The maximum continuous drain current is 8A at TC=25°C and 11A at TA=25°C.
The Rds On is a maximum of 22mOhm at 5A and 10V Vgs.
The SI7980DP-T1-GE3 is in a PowerPAK SO-8 Dual package.
The operating temperature range is -55°C to 150°C.
Yes, the SI7980DP-T1-GE3 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1.