BSC030N08NS5
Infineon
The Infineon BSC030N08NS5 is an N-channel MOSFET with a maximum drain-source voltage of 80V and a low on-resistance of 3.0 mOhm. It is supplied in a PG-TDSON-8 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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22,600 pcs
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22600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Tape & Reel |
The Vishay Dale SI7960DP is a dual N-channel MOSFET featuring TrenchFET® technology and a low thermal resistance PowerPAK® SO-8 package. This device is rated for a 60V drain-source voltage and offers low on-state resistance values, such as 0.021 Ω at VGS = 10V and 0.025 Ω at VGS = 4.5V.
With a continuous drain current of up to 9.7A at 25°C, the SI7960DP is suitable for various power management applications. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 3.5W at 25°C.
The MOSFET is available in a lead-free and halogen-free configuration, meeting environmental standards. Its PowerPAK SO-8 package is designed for surface mounting, providing space savings in compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 60 V.
The continuous drain current is 9.7 A at 25 °C.
The device is available in a PowerPAK SO-8 surface-mount package.
The operating junction and storage temperature range is -55 °C to 150 °C.
Typical on-resistance is 21 mΩ at VGS = 10 V.
The maximum gate-source voltage is ±20 V.
Yes, the device is halogen free as verified in the datasheet.
