SI7956DP-T1-GE3 The Vishay Dale SI7956DP-T1-GE3 is a dual N-channel MOSFET designed for high efficiency applications. It features a 150V drain-source voltage and a low on-resistance.
Mfr Part #:

SI7956DP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7956DP-T1-GE3 is a dual N-channel MOSFET designed for high efficiency applications. It features a 150V drain-source voltage and a low on-resistance.
✓ Total Stock: 22,923 pcs
$ Price Range: $0.99

SI7956DP-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
21,000 pcs
21000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
923 pcs
923 pcs On Request 1 On Request On Request On Request On Request On Request

SI7956DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI7956DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7956DP-T1-GE3 is a dual N-channel MOSFET offering a 150V drain-source voltage and a continuous drain current of 2.6A at 25°C. This MOSFET is built using TrenchFET technology and comes in a low thermal resistance PowerPAK SO-8 package, making it suitable for space-saving designs.

 

Key electrical characteristics include a maximum on-resistance of 105mOhm at 4.1A and 10V Vgs, and a gate threshold voltage typically around 3.1V. The device operates within a temperature range of -55°C to 150°C.

 

Applications for this dual MOSFET include high efficiency primary side switches, half bridge, and forward converters. Its design prioritizes low on-resistance and efficient thermal management within a compact package.

 

The PowerPAK SO-8 package is surface-mounted. The datasheet notes that the exposed copper tip of the lead terminal is not plated and a solder fillet at this tip is not required for adequate interconnection.

SI7956DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 150V MOSFET
Subcategory: Arrays

SI7956DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7956DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7956DP-T1-GE3 Features

  • Dual N-channel 150V MOSFET.
  • Low on-resistance: 105mOhm @ 4.1A, 10V.
  • PowerPAK SO-8 package for space savings.
  • Suitable for high efficiency converters.
  • Halogen-free according to IEC 61249-2-21.

SI7956DP-T1-GE3 Applications

  • Primary side switches.
  • Half bridge converters.
  • Forward converters.

SI7956DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7956DP-T1-GE3?

The maximum drain-source voltage is 150V.

What is the continuous drain current of the SI7956DP-T1-GE3 at 25°C?

The continuous drain current is 4.1A at 25°C.

What is the typical on-resistance of the SI7956DP-T1-GE3 at 10V Vgs?

The typical on-resistance is 105mOhm at 4.1A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7956DP-T1-GE3 supplied in?

It is supplied in a PowerPAK SO-8 Dual package.

Is the SI7956DP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

Home
Account

Categories