| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
This Vishay Dale SI7949DP-T1-GE3 is a dual P-Channel MOSFET designed for power management applications. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 3.2A at 25°C.
The MOSFET features a low on-state resistance (Rds(on)) of 64mΩ at a gate-source voltage (Vgs) of -10V, and 80mΩ at -4.5V, indicating efficient power transfer. The gate charge (Qg) is a maximum of 40nC at 10V.
Packaged in a surface-mount PowerPAK SO-8 dual configuration, this component is suitable for space-constrained designs. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.5W at 25°C.
The device is specified as RoHS3 compliant and Halogen-free, making it suitable for various environmental requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
3.2A at 25°C ambient, 2.6A at 70°C.
64mΩ at VGS=-10V, 80mΩ at VGS=-4.5V.
3V maximum at 250µA drain current.
-55°C to 150°C.
PowerPAK SO-8 Dual.
1.5W at 25°C ambient.