SI7949DP-T1-E3 The Vishay SI7949DP-T1-E3 is a P-Channel MOSFET with a 60V Drain-Source Voltage and a maximum continuous drain current of 3.2A. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7949DP-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay SI7949DP-T1-E3 is a P-Channel MOSFET with a 60V Drain-Source Voltage and a maximum continuous drain current of 3.2A. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 36,323 pcs
$ Price Range: $0.99

SI7949DP-T1-E3 Available from 2 distributors

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✓ Non-Authorised
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36,160 pcs
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163 pcs
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SI7949DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI7949DP-T1-E3 Description

Short technical summary and product information.

The Vishay SI7949DP-T1-E3 is a dual P-Channel MOSFET designed for power switching applications. It features a Drain-Source Voltage (Vds) of 60V and a continuous drain current (Id) of up to 3.2A at 25°C. The MOSFET exhibits a low on-state resistance, with a typical value of 0.064 Ohms at Vgs = -10V.

 

This device operates within a temperature range of -55°C to 150°C and is available in a compact PowerPAK SO-8 package, suitable for surface mounting. The MOSFET is also characterized by its logic level gate feature and halogen-free compliance.

 

Key electrical parameters include a typical gate charge of 26nC at Vgs = -10V and a maximum gate threshold voltage of 3V at 250µA. The maximum power dissipation is rated at 1.5W at 25°C. The component is designed with TrenchFET technology for improved thermal performance and reliability.

SI7949DP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Dual P-Channel 60V MOSFET
Subcategory: P-Channel MOSFET

SI7949DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: true

SI7949DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7949DP-T1-E3 Features

  • Dual P-Channel 60V MOSFET.
  • Low on-state resistance.
  • Compact PowerPAK SO-8 package.
  • Logic Level Gate compatible.
  • Halogen-free compliance.

SI7949DP-T1-E3 Applications

  • Suitable for power switching.
  • Ideal for control circuits.
  • Efficient power management.
  • Compact electronic designs.

SI7949DP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the SI7949DP-T1-E3?

The datasheet specifies a maximum Drain-Source Voltage of 60V.

What is the continuous drain current of the SI7949DP-T1-E3?

The continuous drain current is 3.2A at 25°C.

What is the typical on-state resistance at VGS = -10V?

The typical on-state resistance is 0.064 Ohms at VGS = -10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI7949DP-T1-E3 supplied in?

It is supplied in a PowerPAK SO-8 Dual package.

Is the SI7949DP-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is this MOSFET halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21.

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