| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,372 pcs
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1372 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
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| Operating Temperature | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI7945DP-T1-GE3 is a dual P-channel MOSFET designed for battery and load switching applications. It features a 30V drain-source voltage and a continuous drain current of up to 10.9A at 25°C. The device offers a low on-resistance of 20mΩ at 10.9A and 10V Vgs, and a gate charge of 74nC at 10V.
This MOSFET is packaged in a PowerPAK SO-8 dual package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. The device is also noted as being halogen-free.
Applications include notebook PCs, game systems, and set-top boxes, where efficient power management is crucial. Its dual P-channel configuration and logic-level gate make it versatile for various switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI7945DP-T1-GE3 is 30V.
The SI7945DP-T1-GE3 is supplied in a PowerPAK SO-8 Dual package.
The operating junction and storage temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The maximum continuous drain current at 25°C is 10.9A.
The on-resistance at 10.9A and 10V Vgs is 20mΩ.
The gate charge at 10V Vgs is 74nC.