SI7942DP-T1-E3 The Vishay Dale SI7942DP-T1-E3 is a dual N-channel MOSFET with a 100V drain-source voltage. It features a low RdsOn of 49mOhm at 10V and a continuous drain current of 5.9A.
Mfr Part #:

SI7942DP-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7942DP-T1-E3 is a dual N-channel MOSFET with a 100V drain-source voltage. It features a low RdsOn of 49mOhm at 10V and a continuous drain current of 5.9A.
✓ Total Stock: 7,665 pcs
$ Price Range: $0.99

SI7942DP-T1-E3 Available from 3 distributors

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4,020 pcs
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2,645 pcs
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SI7942DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI7942DP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7942DP-T1-E3 is a dual N-channel MOSFET designed for power applications. It offers a drain-source voltage of 100V and a low on-resistance of 49mOhm at a gate-source voltage of 10V, with a continuous drain current of 5.9A.

 

This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C. The device features a logic level gate and is designed for applications such as synchronous buck converters.

 

Key electrical characteristics include a gate threshold voltage of 4V (max) at 250µA and a gate charge of 24nC at 10V. The power dissipation is rated at 1.4W.

 

This component is available in a RoHS3 compliant version, with halogen-free options also offered. Its compact PowerPAK SO-8 package and dual MOSFET configuration make it suitable for space-constrained designs.

SI7942DP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 100V PowerPAK SO-8 MOSFET
Subcategory: Dual N-Channel

SI7942DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7942DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7942DP-T1-E3 Features

  • Dual N-channel 100V MOSFET.
  • Low RdsOn: 49mOhm at 10V.
  • 5.9A continuous drain current.
  • PowerPAK SO-8 package.
  • Logic level gate.

SI7942DP-T1-E3 Applications

  • Ideal for multi-phase DC-DC converter designs.
  • Used in automotive load switch protection circuits.
  • Suitable for motor driver half-bridge configurations.
  • Applied in industrial power supply switching stages.

SI7942DP-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7942DP-T1-E3?

The drain-source voltage is 100V.

What is the maximum gate threshold voltage for this MOSFET?

The maximum gate threshold voltage is 4V at 250µA.

What is the typical on-resistance at 10V gate-source voltage?

The typical on-resistance is 49mOhm at 5.9A and 10V.

What is the continuous drain current rating?

The continuous drain current is 5.9A at 25°C.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package is the SI7942DP-T1-E3 in?

It is in a PowerPAK SO-8 Dual package.

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