| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,254 pcs
|
4254 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,254 pcs
|
4254 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay SI7940DP-T1-E3 is a dual N-channel MOSFET designed for surface mount applications. It operates with a drain-source voltage of up to 12V and can handle a continuous drain current of 7.6A. The MOSFET exhibits a maximum on-resistance of 17mOhm when driven at 4.5V gate-source voltage and a current of 11.8A.
This component utilizes MOSFET (Metal Oxide) technology and is characterized by its logic level gate feature, making it suitable for lower voltage drive circuits. The device is housed in a PowerPAK SO-8 Dual package, designed for efficient thermal performance and space-saving on printed circuit boards. Its operating temperature range is from -55°C to 150°C (TJ).
With a power dissipation rating of 1.4W, the SI7940DP-T1-E3 is appropriate for various power management applications where space and efficiency are critical. The device's configuration as 2 N-Channel (Dual) MOSFETs allows for flexible circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the SI7940DP-T1-E3 is 12V.
The continuous drain current rating for the SI7940DP-T1-E3 is 7.6A.
The maximum on-resistance (Rds On) is 17mOhm at a drain current of 11.8A and gate-source voltage of 4.5V.
The operating temperature range for this MOSFET is -55°C to 150°C (TJ).
The SI7940DP-T1-E3 is supplied in a PowerPAK SO-8 Dual package.
Yes, the SI7940DP-T1-E3 features a logic level gate.