| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,097 pcs
|
3097 pcs | On Request | 1 | On Request | On Request | 15+14+ | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,798 pcs
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1798 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,340 pcs
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1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7938DP-T1-GE3 is a high-performance Dual N-Channel Power MOSFET designed for applications such as POL (Power-on-Line) and DC/DC converters. It offers a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of up to 60A.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 5.8mOhm at a gate-source voltage (Vgs) of 10V, and 7.0mOhm at 4.5V Vgs. The typical gate charge (Qg) is 21nC. The device is rated for a maximum power dissipation of 46W at 25°C case temperature.
This MOSFET is housed in a PowerPAK SO-8 Dual package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is tested for Rg and UIS, ensuring reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 40V.
The continuous drain current is 60A at 25°C case temperature and 18.5A at 25°C ambient temperature.
The maximum Rds(on) is 5.8mΩ at Vgs = 10V and 7.0mΩ at Vgs = 4.5V.
It is available in a surface-mount PowerPAK SO-8 Dual package.
The operating junction and storage temperature range is -55°C to +150°C.
The typical gate charge (Qg) is 21nC.