| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The SI7923DN-T1-GE3 is a dual P-channel enhancement-mode MOSFET from Vishay Dale, designed for medium-power switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 6.4A at 25°C (4.3A at 85°C). The device offers a maximum on-resistance of 47mOhm at VGS = -10V and 75mOhm at VGS = -4.5V, enabling efficient low-voltage operation.
This MOSFET is housed in a 1212-8 surface-mount package and supports an operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.8W at 25°C ambient. The device includes a body diode with a continuous source current rating of 2.3A at 25°C.
Typical gate charge is 21nC at VGS = 10V, making it suitable for moderate-speed switching applications. The dual-channel configuration in a single package saves board space in applications requiring two independent P-channel switches.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
4.3A.
47mOhm.
-55°C to 150°C.
1V to 3V at ID = -250µA.
2.8W.