SI7923DN-T1-E3 The Vishay Dale SI7923DN-T1-E3 is a dual P-channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.3A. It features a low Rds(on) of 47mOhm at 10V Vgs and is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SI7923DN-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7923DN-T1-E3 is a dual P-channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.3A. It features a low Rds(on) of 47mOhm at 10V Vgs and is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 1,683 pcs
$ Price Range: $0.99

SI7923DN-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,683 pcs
1683 pcs On Request 1 On Request On Request On Request On Request On Request

SI7923DN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI7923DN-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7923DN-T1-E3 is a dual P-channel MOSFET designed for various applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 4.3A at 85°C. The device exhibits a low on-state resistance (Rds(on)) of 47mOhm at a gate-source voltage (Vgs) of 10V, and 75mOhm at 4.5V Vgs.

 

This MOSFET utilizes TrenchFET technology and comes in a compact PowerPAK 1212-8 dual package, suitable for surface mounting. Its operating temperature range is from -55°C to 150°C. Key electrical characteristics include a gate threshold voltage (Vgs(th)) between 1V and 3V at 250µA, and a gate charge (Qg) of 21nC at 10V Vgs.

 

Applications for this MOSFET include battery switches and load switches in portable devices. It is designed with a logic level gate for ease of use in various circuit designs. The device is also noted as being halogen-free according to IEC 61249-2-21 standards.

SI7923DN-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7923DN-T1-E3 Dual P-Channel 30V MOSFET
Subcategory: Arrays

SI7923DN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7923DN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7923DN-T1-E3 Features

  • Dual P-Channel 30V MOSFET
  • Low Rds(on) of 47mOhm at 10V Vgs
  • Compact PowerPAK 1212-8 Dual package
  • Logic Level Gate technology
  • Halogen-free according to IEC 61249-2-21

SI7923DN-T1-E3 Applications

  • Portable battery switch application
  • Load switching in portable devices
  • Dual P-Channel power management
  • Surface mount power MOSFET arrays
  • Low voltage DC power switching

SI7923DN-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SI7923DN-T1-E3?

The drain-source voltage (Vds) for the SI7923DN-T1-E3 is 30V.

What is the continuous drain current of the SI7923DN-T1-E3?

The continuous drain current (Id) is 4.3A at 85°C and 6.4A at 25°C.

What is the on-state resistance (Rds On) for the SI7923DN-T1-E3?

The Rds On is a maximum of 47mOhm at 6.4A and 10V Vgs.

What is the operating temperature range for the SI7923DN-T1-E3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7923DN-T1-E3 in?

The SI7923DN-T1-E3 is in a PowerPAK 1212-8 Dual package.

Is the SI7923DN-T1-E3 RoHS compliant?

Yes, the SI7923DN-T1-E3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI7923DN-T1-E3?

The MSL is 1 Unlimited.

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