| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,040 pcs
|
9040 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,947 pcs
|
8947 pcs | On Request | 1 | On Request | On Request | 1837+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI7922DN-T1-E3 is a dual N-channel MOSFET from Vishay Dale designed for medium-voltage switching applications. It features a drain-to-source voltage rating of 100V and a continuous drain current of 1.8A. The device integrates two independent MOSFETs in a single 1212-8 surface-mount package, enabling compact circuit designs.
The gate threshold voltage is specified at a maximum of 3.5V at 250µA, ensuring reliable turn-on with standard logic-level drive signals. This MOSFET array is suitable for power management, load switching, and DC-DC converter circuits where space efficiency and dual-channel operation are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 100V.
The maximum gate threshold voltage is 3.5V at 250µA.