| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 1628+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The SI7913DN-T1-E3 is a dual P-channel MOSFET from Vishay Dale. It features a drain-source voltage rating of 20V and a continuous drain current of 5A. The device is housed in a 1212-8 surface mount package, suitable for compact PCB designs.
This MOSFET array is designed for low-side switching applications such as load switching and power management. The dual configuration allows for efficient space utilization in circuits requiring two independent P-channel switches.
With a 20V Vdss, it is appropriate for battery-powered and low-voltage systems. The 5A current rating supports moderate power loads. The 1212-8 package offers good thermal performance for its size.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 20V.