SI7911DN-T1-E3 The Vishay Dale SI7911DN-T1-E3 is a P-Channel MOSFET array featuring 20V drain-source voltage and 4.2A continuous current. It is housed in a Surface Mount PowerPAK® 1212-8 Dual package.
Mfr Part #:

SI7911DN-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7911DN-T1-E3 is a P-Channel MOSFET array featuring 20V drain-source voltage and 4.2A continuous current. It is housed in a Surface Mount PowerPAK® 1212-8 Dual package.
✓ Total Stock: 1,565 pcs
$ Price Range: $0.99

SI7911DN-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,308 pcs
1308 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
257 pcs
257 pcs On Request 1 On Request On Request On Request On Request On Request

SI7911DN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI7911DN-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7911DN-T1-E3 is a dual P-Channel MOSFET array designed for surface mount applications. It offers a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.2A. The device exhibits a maximum on-resistance (Rds On) of 51mOhm at 5.7A and 4.5V, with a gate charge (Qg) of 15nC at 4.5V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. This MOSFET array has a power dissipation rating of 1.3W and features a logic level gate.

 

Packaged in the PowerPAK® 1212-8 Dual format, this component is suitable for various electronic circuits requiring efficient switching and power management. Its surface mount design facilitates integration into compact PCB layouts. The MOSFET array technology ensures reliable performance in demanding applications.

 

Environmental compliance includes RoHS3 compliance and MSL 1 rating. The REACH status is unaffected. This component is designed for general-purpose electronic applications where a dual P-channel MOSFET is required.

SI7911DN-T1-E3 Quick Information

Product Type: MOSFET Array
Series: PowerPAK 1212-8
Canonical Name: Vishay Dale SI7911DN-T1-E3
Subcategory: Array

SI7911DN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7911DN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7911DN-T1-E3 Features

  • Dual P-Channel MOSFET array.
  • 20V maximum drain-source voltage.
  • 4.2A continuous drain current.
  • 51mOhm maximum on-resistance.
  • Surface mount PowerPAK® 1212-8 Dual package.

SI7911DN-T1-E3 Applications

  • Suitable for power management circuits.
  • Ideal for general purpose switching.
  • Used in compact electronic designs.
  • Efficient power control applications.

SI7911DN-T1-E3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7911DN-T1-E3?

The maximum drain-source voltage (Vdss) for the SI7911DN-T1-E3 is 20V.

What is the continuous drain current of the SI7911DN-T1-E3?

The SI7911DN-T1-E3 has a continuous drain current of 4.2A.

What is the on-resistance of the SI7911DN-T1-E3?

The maximum on-resistance (Rds On) for the SI7911DN-T1-E3 is 51mOhm at 5.7A and 4.5V.

What type of package is the SI7911DN-T1-E3 in?

The SI7911DN-T1-E3 is in a PowerPAK® 1212-8 Dual package.

How is the SI7911DN-T1-E3 mounted?

The SI7911DN-T1-E3 is designed for Surface Mount.

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