| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
139,077 pcs
|
139077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7904BDN-T1-GE3 is a dual N-channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 20V and a continuous drain current rating of 6A. The on-resistance (Rds On) is specified as a maximum of 30mOhm at 7.1A and 4.5V gate-source voltage, indicating efficient power handling.
This MOSFET utilizes MOSFET (Metal Oxide) technology and has a logic level gate, making it suitable for lower voltage drive circuits. Its input capacitance (Ciss) is 860pF at 10V, and gate charge (Qg) is 24nC at 8V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA.
Packaged in a PowerPAK® 1212-8 Dual, this component is designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a power dissipation rating of 17.8W. The configuration consists of two N-Channel MOSFETs integrated into a single package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
PowerPAK 1212-8 Dual surface-mount package.
-55°C to 150°C.
6A.
30mOhm maximum.
24nC maximum.
2 N-Channel (Dual).