| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,050 pcs
|
4050 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Vishay Dale SI7900EDN-T1 is a single N-channel MOSFET transistor designed for various electronic applications. It features a drain-source voltage of 20 V and a continuous drain current of 9 A at 25°C. The device is suitable for switching and amplification in power management circuits, motor control, and load switching. It is packaged in a PowerPAK 1212 case, which allows for surface mounting on printed circuit boards. The MOSFET has a gate threshold voltage of approximately 0.9 V and a drain-source on-resistance of 0.026 Ω at VGS = 4.5 V, making it efficient for low-voltage operation. Its thermal characteristics include a maximum junction temperature of 150°C and a junction-to-ambient thermal resistance of 38°C/W. The device also features a gate-body leakage current of ±1 µA at VGS = 12 V and a diode forward voltage of approximately 1.1 V at TJ = 25°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 20 V.
It is packaged in PowerPAK 1212 case.
The maximum junction temperature is 150°C.