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SI7900AEDN-T1-E3 The Vishay Dale SI7900AEDN-T1-E3 is a dual N-channel MOSFET with a 20V drain-source voltage and 6A continuous drain current. It features a low RDS(on) and is housed in a PowerPAK 1212-8 package.
Mfr Part #:

SI7900AEDN-T1-E3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7900AEDN-T1-E3 is a dual N-channel MOSFET with a 20V drain-source voltage and 6A continuous drain current. It features a low RDS(on) and is housed in a PowerPAK 1212-8 package.
✓ Total Stock: 30,798 pcs
$ Price Range: $0.99

SI7900AEDN-T1-E3 Available from 6 distributors

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SI7900AEDN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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SI7900AEDN-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7900AEDN-T1-E3 is a dual N-channel power MOSFET designed for applications such as protection switches for 1-2 Li-ion batteries. It offers a 20V drain-source voltage and a continuous drain current of up to 8.5A at 25°C, with a maximum power dissipation of 3.1W at 25°C.

 

This MOSFET utilizes TrenchFET® technology and is rated for 1.8V gate drive. Key electrical characteristics include a low RDS(on) of 0.026 Ω at 8.5A and 4.5V VGS, and a typical gate charge of 10.5 nC. The device also provides 3000V ESD protection.

 

Packaged in a compact PowerPAK® 1212-8 dual package with a low profile of 1.07 mm, it is suitable for surface mounting. The operating temperature range is -55°C to +150°C. Thermal resistance from junction-to-case is a low 2.8 °C/W.

SI7900AEDN-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Dual N-Channel 20 V (D-S) MOSFET, Common Drain
Subcategory: Dual N-Channel

SI7900AEDN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7900AEDN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7900AEDN-T1-E3 Features

  • Dual N-channel MOSFET technology.
  • 20V drain-source voltage rating.
  • Low RDS(on) of 0.026 Ohms.
  • Compact PowerPAK 1212-8 package.
  • Suitable for battery protection circuits.

SI7900AEDN-T1-E3 Applications

  • Protection switch for Li-ion batteries.
  • Power management applications.
  • Low voltage switching tasks.
  • Battery pack integration.

SI7900AEDN-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7900AEDN-T1-E3?

The maximum drain-source voltage (VDS) is 20V.

What is the continuous drain current rating?

The continuous drain current is 8.5A at 25°C and 6.4A at 85°C.

What is the on-resistance (RDS(on)) at VGS = 4.5V?

The maximum on-resistance at VGS = 4.5V is 0.026 Ohms.

What type of package is the SI7900AEDN-T1-E3 in?

It is supplied in a PowerPAK® 1212-8 Dual package.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

Is the SI7900AEDN-T1-E3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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