SI7898DP-T1-GE3 The Vishay Dale SI7898DP-T1-GE3 is an N-Channel MOSFET designed for DC/DC power supply primary side switching and industrial motor drives. It features a 150V drain-source voltage and a 3A continuous drain current.
Mfr Part #:

SI7898DP-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7898DP-T1-GE3 is an N-Channel MOSFET designed for DC/DC power supply primary side switching and industrial motor drives. It features a 150V drain-source voltage and a 3A continuous drain current.
✓ Total Stock: 13,056 pcs
$ Price Range: $0.99

SI7898DP-T1-GE3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7898DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7898DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7898DP-T1-GE3 is an N-Channel MOSFET with a drain-source voltage rating of 150V and a continuous drain current of 3A at 25°C ambient temperature. It utilizes TrenchFET® power MOSFET technology for fast switching and is optimized for PWM applications.

 

This MOSFET offers a low on-resistance of 85mOhm at a gate-source voltage of 10V and a drain current of 3.5A. The typical gate charge is 17 nC at 10V. It operates within a junction temperature range of -55°C to +150°C.

 

The device is housed in a low-profile PowerPAK® SO-8 package, suitable for surface mounting. Its thermal resistance junction-to-ambient is rated at a maximum of 25°C/W for transient conditions and 65°C/W for steady-state operation.

 

Key applications include DC/DC power supply primary side switching and industrial motor drives. The material categorization is compliant with Vishay's standards for lead-free and halogen-free products.

SI7898DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 150V 3A PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SI7898DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7898DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7898DP-T1-GE3 Features

  • N-Channel 150V Power MOSFET.
  • Fast switching TrenchFET technology.
  • Low profile PowerPAK SO-8 package.
  • Optimized for PWM applications.
  • Suitable for DC/DC converters.

SI7898DP-T1-GE3 Applications

  • Used in DC-DC converter circuits.
  • Suitable for power management in portable devices.
  • Ideal for load switching applications.
  • Applicable in battery protection circuits.

SI7898DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7898DP-T1-GE3?

The maximum drain-source voltage is 150 V.

What is the typical gate charge for this MOSFET?

The typical gate charge is 17 nC at a gate-source voltage of 10 V.

What is the maximum on-resistance of the SI7898DP-T1-GE3?

The maximum on-resistance is 85 mOhm at a drain current of 3.5A and a gate-source voltage of 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SI7898DP-T1-GE3 in?

It is in a PowerPAK SO-8 package suitable for surface mounting.

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