SI7898DP-T1-E3 The Vishay Dale SI7898DP-T1-E3 is an N-Channel MOSFET designed for fast switching applications. It features a 150V drain-source voltage and a low profile PowerPAK SO-8 package.
Mfr Part #:

SI7898DP-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7898DP-T1-E3 is an N-Channel MOSFET designed for fast switching applications. It features a 150V drain-source voltage and a low profile PowerPAK SO-8 package.
✓ Total Stock: 59,055 pcs
$ Price Range: $0.99

SI7898DP-T1-E3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI7898DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7898DP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7898DP-T1-E3 is an N-Channel power MOSFET utilizing TrenchFET technology for efficient switching. It offers a maximum drain-source voltage of 150V and a low on-resistance, with RDS(on) rated at 85mOhm at a Vgs of 10V and 3.5A.

 

This MOSFET is optimized for PWM applications and comes in a low thermal resistance PowerPAK SO-8 package with a profile of 1.07 mm. It is suitable for DC/DC power supply primary side switching and industrial motor drives.

 

Key electrical characteristics include a continuous drain current of 3A at 70°C ambient temperature and a pulsed drain current of up to 25A. The operating junction and storage temperature range is -55°C to +150°C.

SI7898DP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7898DP-T1-E3 N-Channel 150V MOSFET
Subcategory: N-Channel

SI7898DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7898DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7898DP-T1-E3 Features

  • N-Channel 150V power MOSFET.
  • Low RDS(on) of 85mOhm at 10V.
  • Fast switching TrenchFET technology.
  • Low profile PowerPAK SO-8 package.
  • Suitable for DC/DC and motor drives.

SI7898DP-T1-E3 Applications

  • DC/DC power supply switching.
  • Industrial motor drive applications.
  • High-efficiency power conversion.

SI7898DP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7898DP-T1-E3?

The maximum drain-source voltage is 150 V.

What is the typical gate charge for the SI7898DP-T1-E3?

The typical gate charge is 17 nC at a Vgs of 10 V.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum Rds On is 85 mOhm at a Vgs of 10 V and Id of 3.5A.

What is the operating temperature range for the SI7898DP-T1-E3?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI7898DP-T1-E3 MOSFET supplied in?

It is supplied in a PowerPAK SO-8 package.

What is the RoHS status of the SI7898DP-T1-E3?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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