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SI7892BDP-T1-E3 N-Channel MOSFET rated for 30V drain-source voltage and 15A continuous drain current. Features low on-resistance of 4.2mOhm and is housed in a PowerPAK SO-8 surface-mount package.
Mfr Part #:

SI7892BDP-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET rated for 30V drain-source voltage and 15A continuous drain current. Features low on-resistance of 4.2mOhm and is housed in a PowerPAK SO-8 surface-mount package.
✓ Total Stock: 153,804 pcs
$ Price Range: $0.99

SI7892BDP-T1-E3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
90,400 pcs
On Request
90400 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
56,934 pcs
On Request
56934 pcs On Request 1 On Request On Request 1147+ On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,020 pcs
On Request
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
2,450 pcs
On Request
2450 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI7892BDP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SI7892BDP-T1-E3 Description

Short technical summary and product information.

The SI7892BDP-T1-E3 is an N-Channel MOSFET manufactured by Vishay Dale. It is designed for switching and power management applications requiring efficient operation at moderate voltages and currents. The device has a maximum drain-to-source voltage of 30V and a continuous drain current of 15A at ambient temperature. Its low on-resistance of 4.2mOhm (at 25A, 10V) minimizes conduction losses. The gate threshold voltage is 3V maximum at 250µA, and the maximum gate-source voltage is ±20V. Input capacitance is 3775pF at 15V Vds, and gate charge is 40nC at 4.5V. The MOSFET uses MOSFET (Metal Oxide) technology and is rated for a maximum power dissipation of 1.8W at ambient temperature. It operates over a junction temperature range of -55°C to 150°C. The part is supplied in a PowerPAK SO-8 surface-mount package, suitable for automated assembly.

SI7892BDP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7892BDP-T1-E3 N-Channel MOSFET
Subcategory: Power Field-Effect Transistors

SI7892BDP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7892BDP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7892BDP-T1-E3 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 15A continuous drain current at ambient temperature.
  • Low on-resistance of 4.2mOhm typical.
  • PowerPAK SO-8 surface-mount package.
  • Wide operating temperature range -55°C to 150°C.

SI7892BDP-T1-E3 Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switching applications.
  • Ideal for power management in portable devices.
  • Employed in battery protection circuits.

SI7892BDP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI7892BDP-T1-E3?

30V.

What package type is the SI7892BDP-T1-E3?

PowerPAK SO-8.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the continuous drain current rating?

15A at ambient temperature (Ta).

What is the on-resistance at 25A and 10V?

4.2mOhm maximum.

What is the gate threshold voltage?

3V maximum at 250µA.

What is the maximum gate-source voltage?

±20V.

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