| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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138 pcs
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138 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7888DP-T1-GE3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power management applications requiring a 30V drain-source breakdown voltage and a continuous drain current rating of 9.4A at ambient temperature.
Key electrical characteristics include a maximum on-resistance of 12mOhm at Vgs = 10V and Id = 12.4A, and a typical gate charge of 10.5nC at Vgs = 5V. The device supports drive voltages of 4.5V and 10V, making it suitable for both low-voltage and standard gate drive circuits. The maximum gate-source voltage is ±12V.
The MOSFET is housed in a PowerPAK SO-8 package, which offers a compact surface-mount footprint with excellent thermal performance. The operating junction temperature range is -55°C to 150°C, and the maximum power dissipation is 1.8W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 9.4A at ambient temperature.
The maximum on-resistance is 12mOhm at Vgs = 10V and Id = 12.4A.
It uses a PowerPAK SO-8 surface mount package.
The operating junction temperature range is -55°C to 150°C.