SI7886ADP-T1-E3 N-Channel MOSFET with 30V drain-source voltage, 15A continuous current, and 4mOhm on-resistance. Surface mount in PowerPAK SO-8 package.
Mfr Part #:

SI7886ADP-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET with 30V drain-source voltage, 15A continuous current, and 4mOhm on-resistance. Surface mount in PowerPAK SO-8 package.
✓ Total Stock: 1,497 pcs
$ Price Range: $0.99

SI7886ADP-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,497 pcs
1497 pcs On Request 1 On Request On Request 15+ On Request On Request

SI7886ADP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7886ADP-T1-E3 Description

Short technical summary and product information.

This N-Channel MOSFET from Vishay Dale offers a maximum drain-source voltage of 30V and a continuous drain current of 15A at ambient temperature. The device features a low on-resistance of 4mOhm (typical at Vgs=10V, Id=25A), enabling high efficiency in power conversion circuits. Gate charge is 60nC at Vgs=4.5V, and input capacitance is 6450pF at Vds=15V, supporting fast switching performance. The gate threshold voltage is 1.5V at Id=250µA, with a recommended drive voltage range of 4.5V to 10V. Maximum power dissipation is 1.9W at ambient temperature. The operating junction temperature range spans -55°C to 150°C. The device is packaged in a surface-mount PowerPAK SO-8 case, suitable for automated assembly. Typical applications include DC-DC converters, load switches, and power management in space-constrained designs.

SI7886ADP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7886ADP-T1-E3 N-Channel MOSFET
Subcategory: N-Channel MOSFET

SI7886ADP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7886ADP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7886ADP-T1-E3 Features

  • N-Channel MOSFET rated at 30V drain-source.
  • Low on-resistance of 4mOhm at 10V gate.
  • High current capacity of 15A.
  • Compact PowerPAK SO-8 surface mount package.
  • Wide operating temperature range -55°C to 150°C.

SI7886ADP-T1-E3 Applications

  • Used in DC-DC converter circuits.
  • Suitable for load switching applications.
  • Ideal for battery management systems.
  • Common in power supply designs.

SI7886ADP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30V

What is the maximum continuous drain current?

15A at ambient temperature

What is the on-resistance?

4mOhm maximum at Id=25A, Vgs=10V

What is the operating temperature range?

-55°C to 150°C (junction)

What package is the device available in?

PowerPAK® SO-8 (surface mount)

What is the gate charge?

60nC maximum at Vgs=4.5V

What is the input capacitance?

6450pF maximum at Vds=15V

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