SI7884BDP-T1-GE3 The Vishay Dale SI7884BDP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 58A continuous current rating. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7884BDP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7884BDP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 58A continuous current rating. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 31,544 pcs
$ Price Range: $0.99

SI7884BDP-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI7884BDP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Product Type
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7884BDP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7884BDP-T1-GE3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 40V and a continuous drain current of 58A at 25°C case temperature.

 

This MOSFET offers a low on-resistance of 7.5mOhm at 16A and 10V Vgs, contributing to efficient power transfer. The gate-source voltage range is ±20V, with a threshold voltage of 3V at 250µA. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.

 

The device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a surface-mount PowerPAK SO-8 configuration, suitable for compact designs. The maximum power dissipation is rated at 46W (Tc) and 4.6W (Ta).

 

Key electrical characteristics include an input capacitance of 3540pF at 20V and a gate charge of 77nC at 10V. The SI7884BDP-T1-GE3 is designed for applications requiring robust switching performance and thermal management.

SI7884BDP-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si7
Canonical Name: Vishay Dale SI7884BDP-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI7884BDP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7884BDP-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7884BDP-T1-GE3 Features

  • 40V drain-source breakdown voltage.
  • 58A continuous drain current.
  • 7.5mOhm maximum on-resistance.
  • PowerPAK SO-8 surface-mount package.
  • Operates from -55°C to 150°C.

SI7884BDP-T1-GE3 Applications

  • Suitable for synchronous rectification.
  • Ideal for power switching applications.
  • Efficient power management designs.
  • Compact electronic circuits.

SI7884BDP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40V.

What is the continuous drain current rating?

58A at case temperature 25°C, 18.5A at ambient temperature 25°C.

What is the on-resistance?

7.5mOhm typical at 10V gate drive, 9mOhm typical at 4.5V gate drive.

What is the gate threshold voltage?

3V maximum at 250µA drain current.

What package does this MOSFET come in?

PowerPAK SO-8.

What is the operating temperature range?

-55°C to 150°C (junction).

What is the input capacitance?

3540 pF maximum at 20V drain-source voltage.

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