| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
324 pcs
|
324 pcs | On Request | 1 | On Request | On Request | 16+15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7884BDP-T1-E3 is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage of 40V and a continuous drain current of 58A at 25°C case temperature.
This MOSFET offers a low on-resistance of 7.5mOhm at 16A and 10V gate-source voltage, contributing to efficient power handling. The gate charge is specified at 77nC maximum at 10V gate-source voltage, and input capacitance is 3540pF maximum at 20V drain-source voltage.
The device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a surface-mount PowerPAK SO-8 configuration, suitable for compact designs. The technology utilized is MOSFET (Metal Oxide).
Key electrical parameters include a gate-source voltage range of ±20V and a gate-source threshold voltage of 3V maximum at 250µA. Power dissipation is rated at 46W (Tc) and 4.6W (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Minimum 40V at ID=250µA and VGS=0V.
PowerPAK SO-8 surface mount package.
-55°C to 150°C junction temperature.
58 A at Tc=25°C; 46 A at Tc=70°C; 18.5 A at Ta=25°C; 14.8 A at Ta=70°C.
Typical on-resistance is 7.5 milliohms at VGS=10V and ID=58A. Maximum on-resistance is 7.5 milliohms at ID=16A and VGS=10V.
Maximum 3V at ID=250µA.
77 nC at VGS=10V.