| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
287 pcs
|
287 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale Si7882DP-T1-GE3 is an N-Channel MOSFET designed for efficient power switching applications. It offers a drain-source voltage (Vds) of 12V and a continuous drain current (Id) of 13A at 25°C.
Key electrical characteristics include a low on-resistance (Rds On) of 5.5mOhm at a Vgs of 4.5V, and a gate charge (Qg) of 30nC at 4.5V. The gate threshold voltage (Vgs(th)) is 1.4V at 250µA, and the maximum gate-source voltage is ±8V.
This MOSFET is housed in a PowerPAK SO-8 surface-mount package, providing a low profile of 1.07mm. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.9W at 25°C.
Applications include point-of-load synchronous rectification and synchronous buck converters, optimized for 500kHz operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 12V.
The continuous drain current is 13A at 25°C.
The Rds On is a maximum of 5.5mOhm at 17A and 4.5V Vgs.
The operating temperature range is -55°C to 150°C (TJ).
It is in a PowerPAK SO-8 surface-mount package.
Yes, it is RoHS3 Compliant.