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12,000 pcs
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12000 pcs | On Request | 1 | On Request | On Request | 1025+ | On Request | On Request |
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The Vishay Dale SI7882DP-T1-E3 is a high-efficiency N-Channel MOSFET designed for applications requiring fast switching and reduced gate charge. It offers a maximum drain-source voltage of 12V and a continuous drain current of 13A at 25°C ambient temperature. The Rds On is specified at a low 5.5mOhm when driven with 4.5V at 17A.
This MOSFET utilizes TrenchFET technology and comes in a low-profile PowerPAK SO-8 package, suitable for surface mounting. Its operating temperature range is from -55°C to 150°C. The device is optimized for PWM applications and synchronous rectification in point-of-load converters and step-down designs.
Key electrical characteristics include a gate threshold voltage of 1.4V at 250µA and a maximum gate-source voltage of ±8V. The maximum power dissipation is 1.9W at 25°C ambient temperature. The component is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SI7882DP-T1-E3 is 12V.
The SI7882DP-T1-E3 has a maximum continuous drain current of 13A at 25°C ambient temperature.
The Rds On for the SI7882DP-T1-E3 is a maximum of 5.5mOhm at 17A drain current and 4.5V gate-source voltage.
The SI7882DP-T1-E3 operates between -55°C and 150°C.
The SI7882DP-T1-E3 is supplied in a PowerPAK SO-8 package for surface mounting.
Yes, the SI7882DP-T1-E3 is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the SI7882DP-T1-E3 is 1.