SI7880ADP-T1-E3 The Vishay Dale SI7880ADP-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7880ADP-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7880ADP-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 1,453 pcs
$ Price Range: $0.99

SI7880ADP-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,300 pcs
1300 pcs On Request 1 On Request On Request 1042 On Request On Request
Non-Authorised Inventory information
153 pcs
153 pcs On Request 1 On Request On Request 1351+ On Request On Request

SI7880ADP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7880ADP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7880ADP-T1-E3 is a TrenchFET® power MOSFET designed for DC/DC converters, suitable for use as a low-side MOSFET in synchronous buck converters and as a secondary synchronous rectifier.

 

This N-Channel MOSFET features a 30V drain-source voltage (VDS) and a maximum continuous drain current of 40A at 25°C case temperature. Its on-resistance (RDS(on)) is as low as 3mOhm at 20A and 10V gate-source voltage. The device has a typical gate charge (Qg) of 37nC and an input capacitance (Ciss) of 5600pF at 15V.

 

The MOSFET operates within a junction temperature range of -55°C to +150°C. It is packaged in a low-profile PowerPAK® SO-8 surface-mount package, measuring 6.15mm x 5.15mm with a height of 1.07mm. The package offers low thermal resistance.

 

Key electrical characteristics include a gate-source voltage (VGS) of ±20V and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The device is optimized for PWM applications and is 100% Rg tested.

SI7880ADP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7880ADP-T1-E3 N-Channel 30V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SI7880ADP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7880ADP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7880ADP-T1-E3 Features

  • TrenchFET® power MOSFET technology.
  • PWM optimized for efficient switching.
  • Low thermal resistance PowerPAK SO-8 package.
  • 30V drain-source voltage rating.
  • 40A continuous drain current capability.

SI7880ADP-T1-E3 Applications

  • DC/DC converters.
  • Low-side synchronous buck.
  • Desktop power supplies.
  • Secondary synchronous rectifier.

SI7880ADP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI7880ADP-T1-E3?

30V.

What package is the SI7880ADP-T1-E3 available in?

PowerPAK SO-8.

What is the operating temperature range of the SI7880ADP-T1-E3?

-55°C to 150°C junction temperature.

What is the continuous drain current rating of the SI7880ADP-T1-E3?

40A at 25°C case temperature.

What is the on-resistance of the SI7880ADP-T1-E3?

3mOhm maximum at 20A, 10V gate drive.

What is the gate charge of the SI7880ADP-T1-E3?

125nC maximum at 10V.

Is the SI7880ADP-T1-E3 a surface mount device?

Yes, it is surface mount in the PowerPAK SO-8 package.

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