SI7868ADP-T1-E3 The Vishay Dale SI7868ADP-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 40A continuous drain current. It features a low Rds On of 2.25mOhm at 20A, 10V.
Mfr Part #:

SI7868ADP-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7868ADP-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 40A continuous drain current. It features a low Rds On of 2.25mOhm at 20A, 10V.
✓ Total Stock: 18,590 pcs
$ Price Range: $0.99

SI7868ADP-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
12,000 pcs
12000 pcs On Request 1 On Request On Request 09+ On Request On Request
Non-Authorised Inventory information
6,590 pcs
6590 pcs On Request 1 On Request On Request 05+ On Request On Request

SI7868ADP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7868ADP-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI7868ADP-T1-E3 is a single N-Channel MOSFET designed for surface mount applications. It operates with a drain-source voltage of 20V and can handle a continuous drain current of 40A (Tc).

 

The MOSFET exhibits a low on-resistance of 2.25mOhm at 20A and 10V gate-source voltage, with a gate threshold voltage of 1.6V at 250µA. Key electrical parameters include an input capacitance of 6110 pF at 10V and a gate charge of 150 nC at 10V.

 

Operating within a temperature range of -55°C to 150°C (TJ), this device has a maximum power dissipation of 83W (Tc). It is packaged in a PowerPAK SO-8 configuration and is supplied on a reel.

 

This component is suitable for various power management applications requiring efficient switching and low conduction losses. Its surface mount design facilitates integration into compact electronic assemblies.

SI7868ADP-T1-E3 Quick Information

Product Type: MOSFET
Series: SI7
Canonical Name: SI7868ADP-T1-E3 N-Channel MOSFET
Subcategory: Single

SI7868ADP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7868ADP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7868ADP-T1-E3 Features

  • 20V drain-source breakdown voltage.
  • 40A continuous drain current.
  • Low 2.25mOhm Rds On.
  • Surface mount PowerPAK SO-8 package.
  • Wide -55°C to 150°C operating temperature.

SI7868ADP-T1-E3 Applications

  • Ideal for power switching applications.
  • Suitable for DC-DC converters.
  • Used in battery management systems.
  • Applicable in load switch circuits.

SI7868ADP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI7868ADP-T1-E3?

The drain-source breakdown voltage (Vds) is 20V.

What is the continuous drain current rating?

The continuous drain current is 40A.

What is the on-resistance (Rds On) of this MOSFET?

The Rds On is a maximum of 2.25mOhm when measured at 20A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI7868ADP-T1-E3 supplied in?

It is supplied in a PowerPAK SO-8 package.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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