| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
947 pcs
|
947 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7866ADP-T1-GE3 from Vishay Dale is an N-Channel MOSFET designed for power applications. It features a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 40A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 2.4mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer. The gate threshold voltage (Vgs(th)) is 2.2V at 250µA, with a maximum gate-source voltage of ±20V. Key electrical parameters include an input capacitance (Ciss) of 5415pF at 10V and a gate charge (Qg) of 125nC at 10V.
With a maximum power dissipation of 5.4W (ambient) and 83W (case), and an operating temperature range of -55°C to 150°C (TJ), this device is suitable for demanding environments. The MOSFET utilizes Metal Oxide technology and is packaged in a PowerPAK SO-8 surface mount package, designed for efficient thermal management.
This component is suitable for various power switching and control applications where high current and low on-resistance are critical. Its surface mount design facilitates integration into compact electronic assemblies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
PowerPAK SO-8.
-55°C to 150°C.
40A at case temperature.
2.4mOhm at 20A, 10V gate drive.
2.2V maximum at 250µA.
125nC at 10V gate drive.