SI7866ADP-T1-E3 The Vishay Dale SI7866ADP-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 40A continuous current rating. It features a surface mount PowerPAK SO-8 package.
Mfr Part #:

SI7866ADP-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7866ADP-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 40A continuous current rating. It features a surface mount PowerPAK SO-8 package.
✓ Total Stock: 273,560 pcs
$ Price Range: $0.99

SI7866ADP-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI7866ADP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7866ADP-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI7866ADP-T1-E3 is a high-performance N-Channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Tc) of 40A, making it suitable for power switching applications.

 

The MOSFET utilizes Metal Oxide Semiconductor technology and comes in a PowerPAK® SO-8 package, designed for surface mounting. Key electrical characteristics include a low Rds On of 2.4mOhm at 20A and 10V, a gate charge (Qg) of 125 nC at 10V, and a gate threshold voltage (Vgs(th)) of 2.2V at 250µA. The operating temperature range is -55°C to 150°C (TJ).

 

With a power dissipation of 5.4W (Ta) and 83W (Tc), this component is built for demanding environments. It is specified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI7866ADP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7866ADP-T1-E3 N-Channel MOSFET
Subcategory: Single

SI7866ADP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7866ADP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7866ADP-T1-E3 Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • 40A continuous drain current rating.
  • Low Rds On of 2.4mOhm at 20A, 10V.
  • Surface mount PowerPAK SO-8 package.
  • RoHS3 Compliant and MSL 1 rated.

SI7866ADP-T1-E3 Applications

  • Used in power management circuits.
  • Ideal for DC-DC converters.
  • Suitable for motor drive applications.
  • Used in load switching systems.
  • Applied in battery protection circuits.

SI7866ADP-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI7866ADP-T1-E3?

The drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current of the SI7866ADP-T1-E3?

The continuous drain current is 40A when measured at the case (Tc).

What is the maximum operating temperature for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI7866ADP-T1-E3 in?

It is in a PowerPAK® SO-8 package designed for surface mounting.

Is the SI7866ADP-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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