SI7860DP-T1-E3 N-Channel MOSFET with 30V drain-source voltage and 11A continuous drain current. Features low 8mOhm on-resistance in a PowerPAK SO-8 package.
Mfr Part #:

SI7860DP-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET with 30V drain-source voltage and 11A continuous drain current. Features low 8mOhm on-resistance in a PowerPAK SO-8 package.
✓ Total Stock: 137,474 pcs
$ Price Range: $0.99

SI7860DP-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
131,474 pcs
131474 pcs On Request 1 On Request On Request 1147+ On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 1045 On Request On Request

SI7860DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7860DP-T1-E3 Description

Short technical summary and product information.

The SI7860DP-T1-E3 is an N-Channel MOSFET from Vishay Dale designed for efficient power management. It features a drain-source voltage (Vdss) of 30V and a continuous drain current of 11A at ambient temperature. The device offers a low maximum on-resistance of 8mOhm at 18A and 10V gate drive, enabling high efficiency in switching applications. The gate charge is 18nC at 4.5V, and the gate threshold voltage is 3V at 250µA. The MOSFET is housed in a PowerPAK SO-8 package, which provides excellent thermal performance and is suitable for surface mount assembly. The operating junction temperature range is -55°C to 150°C, and the maximum power dissipation is 1.8W at ambient temperature. This component is ideal for load switching, DC-DC converters, and other power management circuits where low voltage and moderate current are required.

SI7860DP-T1-E3 Quick Information

Product Type: MOSFET
Series: SI7860DP-T1-E3
Canonical Name: Vishay Dale SI7860DP-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI7860DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7860DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7860DP-T1-E3 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current of 11A at ambient temperature.
  • Low on-resistance of 8mOhm at 10V gate drive.
  • Gate charge of 18nC at 4.5V for efficient switching.
  • PowerPAK SO-8 surface mount package.

SI7860DP-T1-E3 Applications

  • Ideal for load switching in low-voltage circuits.
  • Used in DC-DC converter power stages.
  • Suitable for battery management and protection.
  • Applicable in power distribution switches.

SI7860DP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the FET type of the SI7860DP-T1-E3?

The FET type is N-Channel.

What is the drain-source voltage rating?

The drain-source voltage (Vdss) is 30V.

What is the continuous drain current?

The maximum continuous drain current is 11A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 8mOhm at 18A and 10V gate drive.

What is the gate charge?

The maximum gate charge is 18nC at 4.5V gate-source voltage.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the SI7860DP-T1-E3 available in?

The device is available in a PowerPAK SO-8 surface mount package.

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