| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,320 pcs
|
2320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,010 pcs
|
2010 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI7860ADP-T1-E3 from Vishay Dale is an N-Channel MOSFET designed for power management applications. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 11A at ambient temperature.
This MOSFET offers a low on-resistance (Rds On) of 9.5mOhm at 16A and 10V, with a gate charge (Qg) of 18nC at 4.5V. The gate threshold voltage (Vgs(th)) is 3V at 250µA, and the maximum gate-source voltage is ±20V. The maximum power dissipation is rated at 1.8W at ambient temperature.
Packaged in a PowerPAK® SO-8 surface mount configuration, this device operates within a temperature range of -55°C to 150°C (TJ). It utilizes Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology.
Compliance includes RoHS3, MSL 1, and REACH Unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating temperature range is -55°C to 150°C (TJ).
The package type is PowerPAK® SO-8 for surface mounting.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The drain-to-source voltage is 30V.
The continuous drain current rating is 11A.
The maximum on-resistance is 9.5mOhm at 16A and 10V.