| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,720 pcs
|
2720 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Technology |
The SI7860ADP-T1-E3 is an obsolete N-Channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology for enhanced performance. It offers a drain-source voltage of 30V and a continuous drain current of 11A at 25°C.
Key electrical characteristics include a maximum on-resistance of 9.5 mOhm at 16A and 10V, a gate threshold voltage of 3V (max) at 250µA, and a maximum gate-source voltage of ±20V. The gate charge is a maximum of 18nC at 4.5V. With a power dissipation of 1.8W (Ta), this MOSFET is suitable for applications requiring efficient power handling.
The device operates within a temperature range of -55°C to 150°C (TJ). It is housed in a PowerPAK SO-8 surface-mount package, designed for efficient heat dissipation. The MOSFET is RoHS compliant and has a Moisture Sensitivity Level of 1.
Applications for this MOSFET include switching power supplies, DC-DC converters, motor drivers, and power management in computers and telecommunications equipment. Its low Rds(On) and high current capacity make it suitable for compact, high-efficiency designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
The continuous drain current (Id) at 25°C is 11A.
The maximum on-resistance (Rds On) is 9.5 mOhm at 16A and 10V.
The operating temperature range is -55°C to 150°C.
It is in a PowerPAK SO-8 surface mount package.
Yes, it is RoHS3 Compliant.