SI7858BDP-T1-GE3 The Vishay Dale SI7858BDP-T1-GE3 is an N-Channel MOSFET with a 12V drain-source voltage rating. It offers a continuous drain current of 40A and a low Rds On of 2.5mOhm at 4.5V.
Mfr Part #:

SI7858BDP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7858BDP-T1-GE3 is an N-Channel MOSFET with a 12V drain-source voltage rating. It offers a continuous drain current of 40A and a low Rds On of 2.5mOhm at 4.5V.
✓ Total Stock: 2,367 pcs
$ Price Range: $0.99

SI7858BDP-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI7858BDP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7858BDP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7858BDP-T1-GE3 is a single N-Channel MOSFET designed for high-current synchronous rectification applications. It features a 12V drain-source voltage and a continuous drain current capability of 40A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 2.5mOhm at 15A and 4.5V Vgs, and a gate threshold voltage of 1V at 250µA. The MOSFET also offers a typical gate charge of 56 nC and a maximum input capacitance of 5760 pF.

 

This device is housed in a PowerPAK SO-8 surface-mount package, suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ). The MOSFET is tested for 100% Rg and UIS, ensuring reliability in demanding applications.

 

Designed with TrenchFET power MOSFET technology, the SI7858BDP-T1-GE3 is suitable for low output voltage, high current applications. It is also specified as Lead (Pb)-free and halogen-free.

SI7858BDP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7858BDP-T1-GE3 N-Channel 12V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SI7858BDP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7858BDP-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7858BDP-T1-GE3 Features

  • N-Channel 12V Power MOSFET.
  • Low Rds On: 2.5mOhm at 4.5V Vgs.
  • High continuous drain current: 40A.
  • PowerPAK SO-8 surface mount package.
  • Lead (Pb)-free and halogen-free.

SI7858BDP-T1-GE3 Applications

  • Ideal for synchronous rectification.
  • Suitable for low voltage applications.
  • Designed for high current circuits.
  • Used in power management systems.

SI7858BDP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

12V.

What package is the SI7858BDP-T1-GE3 available in?

PowerPAK SO-8.

What is the operating temperature range?

-55°C to 150°C.

What is the continuous drain current?

40A at case temperature 25°C.

What is the on-resistance at 4.5V gate drive?

2.5mOhm.

What is the gate threshold voltage?

1V at 250µA.

What is the maximum power dissipation?

48W at case temperature 25°C.

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