SI7858ADP-T1-E3 The Vishay Dale SI7858ADP-T1-E3 is an N-Channel MOSFET with a 12V drain-source voltage and a continuous current rating of 20A. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SI7858ADP-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7858ADP-T1-E3 is an N-Channel MOSFET with a 12V drain-source voltage and a continuous current rating of 20A. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 3,694 pcs
$ Price Range: $0.99

SI7858ADP-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,694 pcs
3694 pcs On Request 1 On Request On Request 1011+ On Request On Request

SI7858ADP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7858ADP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7858ADP-T1-E3 is an N-Channel MOSFET designed for high-current synchronous rectifier applications. It features a low Rds(on) of 2.6mΩ at 4.5V Vgs and a continuous drain current of 29A at 25°C.

 

This MOSFET operates with a drain-source voltage (Vds) of 12V and a gate-source voltage (Vgs) of ±8V maximum. The gate threshold voltage is 1.5V maximum at 250µA. Key electrical characteristics include an input capacitance of 5700pF at 6V and a gate charge of 80nC at 4.5V.

 

Designed with a low profile PowerPAK SO-8 package, it offers a low thermal resistance. The operating temperature range is -55°C to 150°C. The device is RoHS3 compliant and has a Moisture Sensitivity Level of 1.

 

Applications include low output voltage, high current synchronous rectifiers. Its surface mount type and PowerPAK SO-8 package make it suitable for compact designs.

SI7858ADP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 12V MOSFET
Subcategory: N-Channel

SI7858ADP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7858ADP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7858ADP-T1-E3 Features

  • N-Channel 12V MOSFET
  • Low Rds On: 2.6mOhm at 4.5V
  • High Continuous Current: 29A
  • PowerPAK SO-8 Surface Mount Package
  • RoHS3 Compliant

SI7858ADP-T1-E3 Applications

  • Ideal for power management circuits.
  • Used in DC-DC converter designs.
  • Suitable for load switching applications.
  • Can be used in battery protection.

SI7858ADP-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI7858ADP-T1-E3?

12V.

What is the package type of this MOSFET?

PowerPAK SO-8.

What is the operating temperature range?

-55°C to 150°C.

What is the continuous drain current at 25°C?

29A.

What is the gate threshold voltage?

1.5V at 250µA.

What is the on-resistance?

2.6mΩ at 29A, 4.5V.

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