| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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51,657 pcs
|
51657 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,667 pcs
|
3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1916+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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The SI7852DP-T1-GE3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power management applications requiring a drain-to-source voltage rating of 80V and a continuous drain current of 7.6A at an ambient temperature of 25°C.
Key electrical characteristics include a maximum on-resistance of 16.5 mOhm at a gate-source voltage of 10V and a drain current of 10A, ensuring low conduction losses. The device has a typical gate charge of 34 nC at 10V, which supports efficient switching performance. The maximum gate-source voltage threshold is 2V at 250µA.
The MOSFET is housed in a PPAK SO-8 package, suitable for surface-mount assembly. It is rated for a maximum power dissipation of 1.9W at 25°C ambient temperature. The device also features a pulsed drain current capability of 50A and an avalanche current rating of 40A, providing robustness in demanding switching environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 80V.
The maximum continuous drain current is 7.6A at 25°C ambient temperature.
The maximum on-resistance is 16.5 mOhm at a gate-source voltage of 10V and drain current of 10A.
The typical gate charge is 34 nC at a gate-source voltage of 10V.
The maximum gate-source voltage is ±20V.
The minimum gate-source threshold voltage is 2V at a drain current of 250µA.