SI7852DP-T1-E3 The Vishay Dale SI7852DP-T1-E3 is an N-Channel MOSFET with 80V drain-source voltage and a maximum Rds On of 16.5mOhm at 10A, 10V. It comes in a PowerPAK SO-8 package.
Mfr Part #:

SI7852DP-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7852DP-T1-E3 is an N-Channel MOSFET with 80V drain-source voltage and a maximum Rds On of 16.5mOhm at 10A, 10V. It comes in a PowerPAK SO-8 package.
✓ Total Stock: 138,102 pcs
$ Price Range: $0.99

SI7852DP-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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88,020 pcs
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50,000 pcs
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82 pcs
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SI7852DP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7852DP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7852DP-T1-E3 is an N-Channel MOSFET designed for primary side switching in DC/DC applications. It features TrenchFET power MOSFET technology and a low-profile PowerPAK SO-8 package with a height of 1.07 mm.

 

Key electrical specifications include a drain-source voltage of 80V, a maximum on-resistance of 16.5mOhm at 10A and 10V, and a typical gate charge of 34nC at 10V. The continuous drain current is rated at 7.6A at 25°C ambient temperature, with a maximum power dissipation of 1.9W at 25°C ambient.

 

This MOSFET is optimized for fast switching and is 100% Rg tested. The PowerPAK SO-8 package is surface-mounted. The operating temperature range is -55°C to 150°C.

SI7852DP-T1-E3 Quick Information

Product Type: MOSFET
Series: PPAK SO-8
Canonical Name: Vishay Dale SI7852DP-T1-E3 N-Channel 80V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SI7852DP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7852DP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7852DP-T1-E3 Features

  • N-Channel 80V TrenchFET power MOSFET.
  • Low Rds On: 16.5mOhm max at 10A, 10V.
  • Optimized for fast PWM switching.
  • Low profile 1.07mm PowerPAK SO-8 package.
  • Surface mountable for compact designs.

SI7852DP-T1-E3 Applications

  • Primary side switch for DC/DC.
  • Power supply applications.
  • Switching power supplies.
  • DC-DC converter designs.

SI7852DP-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

80 V.

What package style does this MOSFET use?

PowerPAK SO-8 surface mount.

What is the operating junction temperature range?

-55°C to 150°C.

What is the typical gate charge for this component?

34 nC at a 10V gate drive.

How much continuous drain current can this device handle?

12.5 A at an ambient temperature of 25°C.

What is the maximum pulsed drain current rating?

50 A.

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