SI7852ADP-T1-E3 The Vishay Dale SI7852ADP-T1-E3 is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 30A. It features a low Rds On of 17mOhm at 10A, 10V.
Mfr Part #:

SI7852ADP-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7852ADP-T1-E3 is an N-Channel MOSFET with a drain-source voltage of 80V and a continuous drain current of 30A. It features a low Rds On of 17mOhm at 10A, 10V.
✓ Total Stock: 2,440 pcs
$ Price Range: $0.99

SI7852ADP-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,416 pcs
2416 pcs On Request 1 On Request On Request 20+ On Request On Request
Non-Authorised Inventory information
24 pcs
24 pcs On Request 1 On Request On Request On Request On Request On Request

SI7852ADP-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7852ADP-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI7852ADP-T1-E3 is an N-Channel MOSFET designed for primary side switching applications. It offers a robust 80V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C case temperature.

 

Key electrical characteristics include a maximum Rds On of 17mOhm when driven at 10Vgs and carrying 10A, and a maximum gate charge of 45nC at 10Vgs. The input capacitance is rated at 1825pF maximum at 40Vds. The gate threshold voltage is a maximum of 4.5V at 250µA.

 

This MOSFET operates across a wide temperature range of -55°C to 150°C. It is housed in a PowerPAK SO-8 surface mount package, suitable for various power management designs. The device is halogen-free and RoHS3 compliant.

SI7852ADP-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7852ADP-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI7852ADP-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7852ADP-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7852ADP-T1-E3 Features

  • 80V drain-source voltage rating.
  • 30A continuous drain current.
  • Low 17mOhm Rds On.
  • PowerPAK SO-8 surface mount package.
  • Halogen-free and RoHS3 compliant.

SI7852ADP-T1-E3 Applications

  • Primary side switching applications.
  • Power supply designs.
  • Efficient power management circuits.

SI7852ADP-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI7852ADP-T1-E3?

The maximum drain-source voltage is 80V.

What is the continuous drain current rating?

The continuous drain current is 30A at 25°C case temperature and 12A at 25°C ambient temperature.

What is the maximum Rds On for this MOSFET?

The maximum Rds On is 17mOhm at 10A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI7852ADP-T1-E3 in?

It is supplied in a PowerPAK SO-8 package.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 compliant.

Is the SI7852ADP-T1-E3 halogen-free?

Yes, it is halogen-free.

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