SI7850DP-T1-GE3 The Vishay Dale SI7850DP-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage and 6.2A continuous drain current. It is supplied in a Surface Mount PowerPAK SO-8 package.
Mfr Part #:

SI7850DP-T1-GE3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7850DP-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage and 6.2A continuous drain current. It is supplied in a Surface Mount PowerPAK SO-8 package.
✓ Total Stock: 92,370 pcs
$ Price Range: $0.99

SI7850DP-T1-GE3 Available from 7 distributors

✓ Authorised
✓ Non-Authorised

SI7850DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7850DP-T1-GE3 Description

Short technical summary and product information.

This Vishay Dale SI7850DP-T1-GE3 is a single N-Channel MOSFET designed for surface mount applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 6.2A at ambient temperature.

 

The MOSFET has a gate charge (Qg) of 27 nC at 10V and a gate threshold voltage (Vgs(th)) of 3V at 250µA. The on-resistance (Rds On) is a maximum of 22mOhm at 10.3A and 10V. The gate-to-source voltage (Vgs) has a maximum rating of ±20V.

 

Operating within a temperature range of -55°C to 150°C (TJ), this component has a maximum power dissipation of 1.8W (Ta). It is housed in a PowerPAK SO-8 package, suitable for surface mounting.

 

The RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is Unaffected. However, these compliance statuses are unverified.

SI7850DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: SI7850DP-GE3
Canonical Name: Vishay Dale SI7850DP-T1-GE3 N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI7850DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7850DP-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7850DP-T1-GE3 Features

  • 60V drain-to-source voltage rating.
  • 6.2A maximum continuous drain current.
  • 22mOhm maximum on-resistance.
  • Surface mount PowerPAK SO-8 package.
  • Operates from -55°C to 150°C.

SI7850DP-T1-GE3 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power load switching.
  • Suitable for battery management systems.
  • Applicable in motor drive controls.
  • Used in synchronous rectification.

SI7850DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI7850DP-T1-GE3?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 6.2A at ambient temperature.

What is the on-resistance of the SI7850DP-T1-GE3?

The maximum on-resistance (Rds On) is 22mOhm when the drain current is 10.3A and gate-source voltage is 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI7850DP-T1-GE3 in?

It is supplied in a PowerPAK SO-8 package suitable for surface mounting.

What is the RoHS status?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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