| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
83,028 pcs
|
83028 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,118 pcs
|
2118 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7848BDP-T1-E3 is a single N-Channel MOSFET designed for DC/DC converter applications like synchronous buck and synchronous rectifier circuits. It features a TrenchFET power MOSFET technology, offering a drain-source voltage (Vds) of 40V and a continuous drain current (Id) of up to 47A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 9mOhm at 10V Vgs and 16A Id, and 12mOhm at 4.5V Vgs. The gate charge (Qg) is typically 15nC at 10V Vgs. The device operates over a temperature range of -55°C to 150°C (TJ).
This MOSFET is housed in a PowerPAK SO-8 surface mount package. It is 100% Rg and UIS tested. The device is RoHS3 compliant and has an MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
47A at case temperature 25°C, 38A at 70°C, and 16A at ambient temperature 25°C.
Maximum 9mOhm at Vgs=10V and Id=16A; maximum 12mOhm at Vgs=4.5V and Id=16A.
-55°C to 150°C junction temperature.
PowerPAK SO-8 (surface mount).
N-Channel.
15nC at 10V gate-source voltage.