| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
825 pcs
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825 pcs | On Request | 1 | On Request | On Request | 1308+1409+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI7846DP-T1-GE3 is a single N-Channel MOSFET designed for surface mount applications. It features a drain-to-source voltage (Vdss) of 150V and a continuous drain current (Id) of 4A at ambient temperature. The MOSFET offers a low on-resistance (Rds On) of 50mOhm at 5A and 10V gate drive, with a maximum gate charge of 36nC at 10V.
The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.9W at ambient temperature. It is packaged in a PowerPAK SO-8 configuration, suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4.5V at 250µA and a maximum gate-source voltage of ±20V. The technology utilized is MOSFET (Metal Oxide).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 150V.
The continuous drain current is 4A.
The maximum on-resistance (Rds On) is 50mOhm at 5A drain current and 10V gate-source voltage.
It is in a PowerPAK SO-8 package.
The operating temperature range is -55°C to 150°C (TJ).
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.