| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7846DP-T1-E3 is a high-performance N-Channel MOSFET suitable for various power electronics applications. It offers a robust 150V drain-to-source breakdown voltage and can handle up to 4A of continuous drain current.
Key electrical characteristics include a maximum on-resistance of 50mOhm at 5A and 10V gate-source voltage, and a gate charge of 36nC at 10V. The device operates within a temperature range of -55°C to 150°C.
Packaged in a surface-mount PowerPAK® SO-8, this MOSFET is designed for efficient thermal management and ease of integration into compact designs. Its N-Channel configuration and Metal Oxide Semiconductor technology make it a versatile component for power conversion and control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 150V.
The continuous drain current is 4A.
The operating temperature range is -55°C to 150°C.
It is supplied in a PowerPAK SO-8 package.
Yes, it is RoHS3 Compliant.