| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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856 pcs
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856 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name | |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
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| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI7844DP-T1-E3 is a dual N-channel MOSFET with a Metal Oxide Semiconductor Field-Effect Transistor technology. It offers a maximum drain-to-source voltage of 30V and a continuous current rating of 6.4A. The on-resistance is specified as a maximum of 22mOhm at 10A and 10V, with a gate charge of 20nC at 10V.
The MOSFET features a logic level gate and a gate threshold voltage of 2.4V at 250µA. It has a power dissipation rating of 1.4W. The component is housed in a PowerPAK® SO-8 Dual package and is designed for surface mount applications.
This device is suitable for various electronic applications requiring efficient switching and power management. Its dual N-channel configuration and surface mount package make it versatile for integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
6.4A.
22mOhm at 10A, 10V.
2.4V maximum at 250µA.
20nC at 10V.
PowerPAK SO-8 Dual.
Yes, it features a logic level gate.