SI7820DN-T1-E3 The Vishay Dale SI7820DN-T1-E3 is an N-Channel MOSFET designed for surface mount applications. It offers a 200V drain-to-source voltage and a continuous current rating of 1.7A.
Mfr Part #:

SI7820DN-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7820DN-T1-E3 is an N-Channel MOSFET designed for surface mount applications. It offers a 200V drain-to-source voltage and a continuous current rating of 1.7A.
✓ Total Stock: 82,629 pcs
$ Price Range: $0.99

SI7820DN-T1-E3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
78,609 pcs
78609 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request

SI7820DN-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7820DN-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI7820DN-T1-E3 is a single N-Channel MOSFET from the Metal Oxide technology family. It is designed for surface mount applications and comes in a PowerPAK® 1212-8 package.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current of 1.7A at ambient temperature. The on-resistance (Rds On) is a maximum of 240mOhm at 2.6A and 10V gate-source voltage. The gate charge (Qg) is 18 nC at 10V gate-source voltage, with a maximum gate-source voltage of ±20V and a gate threshold voltage of 4V at 250µA.

 

The device operates within a temperature range of -55°C to 150°C (TJ). It has a maximum power dissipation of 1.5W at ambient temperature. The RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1, and REACH status is Unaffected.

 

This MOSFET is suitable for various power management and switching applications where a robust and reliable component is required. Its surface mount package facilitates integration into compact electronic designs.

SI7820DN-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI7820DN-T1-E3 N-Channel MOSFET
Subcategory: Single

SI7820DN-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI7820DN-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7820DN-T1-E3 Features

  • N-Channel MOSFET technology.
  • 200V drain-to-source voltage rating.
  • 1.7A continuous current capability.
  • Surface mount PowerPAK® 1212-8 package.
  • Wide operating temperature range.

SI7820DN-T1-E3 Applications

  • Power switching applications.
  • DC-DC converters.
  • Load management circuits.
  • Battery powered devices.

SI7820DN-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI7820DN-T1-E3?

200V.

What is the maximum continuous drain current?

1.7A at ambient temperature.

What is the on-resistance of this MOSFET?

240mOhm maximum at Vgs=10V and Id=2.6A.

What is the gate charge?

18nC at Vgs=10V.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package does the SI7820DN-T1-E3 come in?

PowerPAK 1212-8 surface mount package.

What is the gate threshold voltage?

4V maximum at Id=250µA.

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