| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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78,609 pcs
|
78609 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Rds On (Max) @ Id, Vgs | |
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This Vishay Dale SI7820DN-T1-E3 is a single N-Channel MOSFET from the Metal Oxide technology family. It is designed for surface mount applications and comes in a PowerPAK® 1212-8 package.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current of 1.7A at ambient temperature. The on-resistance (Rds On) is a maximum of 240mOhm at 2.6A and 10V gate-source voltage. The gate charge (Qg) is 18 nC at 10V gate-source voltage, with a maximum gate-source voltage of ±20V and a gate threshold voltage of 4V at 250µA.
The device operates within a temperature range of -55°C to 150°C (TJ). It has a maximum power dissipation of 1.5W at ambient temperature. The RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1, and REACH status is Unaffected.
This MOSFET is suitable for various power management and switching applications where a robust and reliable component is required. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
1.7A at ambient temperature.
240mOhm maximum at Vgs=10V and Id=2.6A.
18nC at Vgs=10V.
-55°C to 150°C junction temperature.
PowerPAK 1212-8 surface mount package.
4V maximum at Id=250µA.