| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 1915+ | On Request | On Request |
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The SI7818DN-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale. It is rated for a drain-source voltage of 150V and a continuous drain current of 2.2A, making it suitable for medium-voltage power switching applications.
The device is housed in a PPAK1212-8 surface-mount package, which offers a compact footprint for space-constrained designs. The package is designed for efficient heat dissipation and reliable solder joint formation.
As a single N-Channel MOSFET, it can be used in various power management circuits including DC-DC converters, load switches, and motor control. The 150V rating provides adequate margin for 48V systems and other industrial voltage rails.
The part is supplied in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
2.2A.
PPAK1212-8 surface-mount package.
N-Channel.
Vishay Dale.
Transistors - FETs, MOSFETs - Single.